Enhancement-mode in 0.52 Al 0.48 As= in 0.53 Ga 0.47 As=inp Hemt Utilising Ir=ti=pt=au Gate

High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures Citation

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Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures

50-nm E-mode In[subscript 0.7]ga[subscript 0.3]as Phemts on 100-mm Inp Substrate with F[subscript Max] > 1 Thz Accessed Terms of Use Detailed Terms 50-nm E-mode in 0.7 Ga 0.3 as Phemts on 100-mm Inp Substrate with F Max > 1 Thz

We have demonstrated 50-nm enhancement-mode (E-mode) In0.7Ga0.3As PHEMTs with fmax in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In0.52Al0.48As barrier layer, together with a two-step recess process. The fabricated device with Lg = 50-nm exhibits VT = 0.1 V, gm,max = 1.75 mS/μm, fT = 465 GHz and fmax = 1.06 THz at a moderate value of VDS = 0.75 V...

The hydrogen-induced piezoelectric effect in InP HEMTs

Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift, AVT. This is a serious reliability concern. This effect has been attributed to a H-induced piezoelectric effect. Formation of TiHX expands the Ti layer in the gate, causing mechanical stress in the underlying semiconductor. This induces piezoelectric charge in the heterostructure underneath the gate that shifts ...

Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry.

We have investigated the values of the Rashba spin-orbit coupling constant alpha in In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As quantum wells using the weak antilocalization (WAL) analysis as a function of the structural inversion asymmetry (SIA) of the quantum wells. We have found that the deduced alpha values have a strong correlation with the degree of SIA of the quantum wells a...